temperature and field dependent electrical conductivity of alxga1-xas ternary alloy

TEMPERATURE AND FIELD DEPENDENT ELECTRICAL CONDUCTIVITY OF AlXGa1-XAs TERNARY ALLOY

The variations of the electrical conductivity with temperature and electric field of the ternary alloy of gallium, aluminium and arsenic (Al0.75Ga0.25As) with atomic compositions of 99/1 and 98/2 have been investigated. The electrical conductivity of the alloy increases with temperature according to the relation, ? = ?0 exp (??/kT). The activation energy calculated from this empirical relation ...

Temperature-Dependent Electrical Conductivity of GeTe-Based RF Switches

The DC and RF electrical behavior of GeTebased RF switches was characterized in both ON and OFF states at temperatures ranging from 25 K to 375 K. ONstate current-voltage characteristics vary only weakly with temperature, exhibiting Ohmic behavior at all temperatures across the full voltage range measured. OFF-state current varies linearly with voltage at all measured fields for low temperature...

Electronic structures of GaAs/AlxGa1-xAs quantum double rings

In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mix...

Characteristics Study of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT

The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity...

Exciton dynamics in GaAs/AlxGa1-xAs quantum wells

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TIME RESOLVED VERTICAL TRANSPORT IN GaAs/ALxGa1-xAs SUPERLATTICES